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Mauna Ili Pa'a Loa PAR® Nā mea ho'opau Voltage Transient (TVS) DO-218AB SM8S

ʻO ka wehewehe pōkole:

Helu huahana:  DO-218ABSM8S

Hoʻolauna: Ultra-steadyNā Paʻi Voltage Transient PAR® mauna i luna(TVS)DO-218ABʻO SM8S, nona ka puʻupuʻu PN o ka chip i uhi ʻia e ka PI glue, ʻaʻole ia mai nā ʻoiaʻiʻo maikaʻi ʻole o ka ʻoki ʻana i ke koʻikoʻi a me nā ʻaoʻao koʻikoʻi.Ma lalo o ka mahana o 175, hiki i ka diode ke hana e like me ka mea mau.Paʻa loaNā Paʻi Voltage Transient PAR® mauna i luna(TVS)DO-218ABHoʻohana ʻia ʻo SM8S ma ke ʻano he kiaʻi, e pale ana i ka pōʻino o ke kaapuni i ka hoʻololi koke ʻana o ka uila.


Huahana Huahana

Ka nānā 'ana i ka manawa pane

Laulā ana

Huahana Huahana

Nā pono o DO-218AB SM8S:

1. Ma muli o ka ʻenehana o Chemical Etching Method, ua hoʻopau ʻia nā hopena maikaʻi ʻole o ka ʻoki pololei ʻana.
2. ʻOi aku ka ikaika i ka hoʻihoʻi ʻana no ka nui o ka chip ma mua o nā mea like.
3. Haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa ma nā ʻano ʻokoʻa a me nā wahi
4. Ua'āponoʻia e ka maʻamau AEC-Q101
5. Hoʻonui ʻia nā hana a Diode, e pōmaikaʻi ana i ka pale ʻepekema ma ka hui PN.

DO-218AB

NA ANOAI KUMU:

VBR: 11.1 V a i 52.8 V

VWM: 10 V a 43 V

PPPM (10 x 1000 μs): 6600 W

PPPM (10 x 10 000 μs): 5200 W

PD: 8 W

IFSM: 700 A

TJ kiʻekiʻe: 175 °C

Polarity: Uni-directional

Pūʻolo: DO-218AB

Nā Kaʻina Hana o Chip

1. Pa'i 'akomiPaʻi wafer maʻalahi loa)

2. 'Aunoa First-etchingʻO nā mea hana hili ʻakomi,CPK>1.67)

3. Ho'āʻo Polarity ʻAunoa (Pcise Polarity Test)

4. Hui Kūʻai ʻakomi

5. Soldering (Hoʻomalu me ka hui ʻana o ka Nitrogen & Hydrogen

Hoʻopili ʻana i ka ʻūhā )

6. 'Automatic Second-etching (Automatic Second-etching with Ultra-pure Water)

7. Hoʻopili 'akomi (Uniform Gluing & Precise Calculation are realized by Automatic Precise Gluing Equipment)

8. Ho'āʻo Thermal Automatic (Koho Aunoa e ka Thermal Tester)

9. Ho'āʻo 'akomi (Multifunctional Tester)

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